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ZVP4525G
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V (BR)DSS -250
-285
V
I D =-1mA, V GS =0V
Zero gate voltage drain current
Gate-body leakage
I DSS
I GSS
-30
±1
-500
±100
nA
nA
V DS =-250V, V GS =0V
V GS = ± 40V, V DS =0V
I =-1mA, V DS = V GS
Gate-source threshold voltage
V GS(th)
-0.8
-1.5
-2.0
V
D
Static drain-source on-state resistance
Forward transconductance (3)
(1)
R DS(on)
g fs
80
10
13
200
14
18
?
?
mS
V GS =-10V, I D =-200mA
V GS =-3.5V,
I D =-100mA
V DS =-10V,I D =-0.15A
DYNAMIC
(3)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
73
12.8
3.91
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING
(2) (3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
t r
t d(off)
t f
1.53
3.78
17.5
7.85
ns
ns
ns
ns
V DD =-30V, I D =-200mA
R G =50 ? , V GS =-10V
(refer to test circuit)
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
2.45
0.22
0.45
3.45
0.31
0.63
nC
nC
nC
V DS =-25V,V GS =-10V,
I D =-200mA(refer to
test circuit)
SOURCE-DRAIN DIODE
Diode forward voltage (1)
V SD
0.97
V
T j =25°C, I S =-200mA,
V GS =0V
Reverse recovery time (3)
Reverse recovery charge
(3)
t rr
Q rr
205
21
290
29
ns
nC
T j =25°C, I F =-200mA,
di/dt= 100A/ μ s
NOTES:
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - JUNE 2004
SEMICONDUCTORS
4
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